Toshiba

GT5G131(TE12L,Q) Description Datasheet IGBT Type - Voltage - Collector Emitter Breakdown (Max) 400V Vce(on) (Max) @ Vge Ic...
GT60M323(Q) Description Datasheet IGBT Type - Voltage - Collector Emitter Breakdown (Max) 900V Vce(on) (Max) @ Vge Ic...
GT60N322(Q) Description Datasheet IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1000V Vce(on) (Max) @ Vge Ic...
GT80J101B(Q) Description Datasheet IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Vce(on) (Max) @ Vge Ic...
JDV2S01ETH3FT Description Datasheet Capacitance @ Vr F 1.81pF @ 4V 1MHz Capacitance Ratio 2 Capacitance Ratio Condition C1/C4...
JDV2S05ETH3FT Description Datasheet Capacitance @ Vr F 2.48pF @ 4V 1MHz Capacitance Ratio 1.9 Capacitance Ratio Condition C1/C4...
JDV2S25FS(TPL3) Description Datasheet Capacitance @ Vr F 2.12pF @ 4V 1MHz Capacitance Ratio 2.98 Capacitance Ratio Condition C1/C4...
JDV2S25SC(TPL3) Description Datasheet Capacitance @ Vr F 2.08pF @ 4V 1MHz Capacitance Ratio 3 Capacitance Ratio Condition C1/C4...
JDV2S26FS(TPL3) Description Datasheet Capacitance @ Vr F 5.6pF @ 4V 1MHz Capacitance Ratio 3 Capacitance Ratio Condition C1/C4...
JDV2S29FS(TPL3) Description Datasheet Capacitance @ Vr F 1.4pF @ 4V 1MHz Capacitance Ratio 2.91 Capacitance Ratio Condition C1/C4...
JDV2S29SC(TPL3) Description Datasheet Capacitance @ Vr F 1.37pF @ 4V 1MHz Capacitance Ratio 2.92 Capacitance Ratio Condition C1/C4...
JDV2S40FS(TPL3) Description Datasheet Capacitance @ Vr F 2pF @ 10V 1MHz Capacitance Ratio 2.4 Capacitance Ratio Condition C2/C10...
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